TPC8032-H Todos los transistores

 ..1. Size:235K  toshiba
 tpc8032-h.pdf

 8.1. Size:223K  toshiba
 tpc8033-h.pdf

TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8033-H High Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge QSW = 9.6 nC (typ.) Low drain-source ON-resistance RDS (ON) = 4.0 m (

 8.2. Size:225K  toshiba
 tpc8037-h.pdf

TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 5.0 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6 m

 8.3. Size:226K  toshiba
 tpc8038-h.pdf

TPC8038-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8038-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 5.0 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6 m

 8.4. Size:223K  toshiba
 tpc8034-h.pdf

 8.5. Size:288K  toshiba
 tpc8030.pdf

TPC8030 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8030 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 7.5 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage curren

 8.6. Size:230K  toshiba
 tpc8031-h.pdf

 8.7. Size:224K  toshiba
 tpc8036-h.pdf

TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge Q = 13 nC (typ.) SW Low drain-source ON-resistance R = 3.1 m (typ.

 8.8. Size:217K  toshiba
 tpc8035-h.pdf

TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge Q = 17 nC (typ.) SW Low drain-source ON-resistance R = 2.3 m (typ.)

 8.9. Size:221K  toshiba
 tpc8039-h.pdf

TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8039-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge Q = 8.6 nC (typ.) SW Low drain-source ON-resistance R = 4.1 m (typ