TPC8035-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8035-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.1 nS
Cossⓘ - Capacitancia de salida: 1100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8035-H MOSFET
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TPC8035-H datasheet
tpc8035-h.pdf
TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge Q = 17 nC (typ.) SW Low drain-source ON-resistance R = 2.3 m (typ.)
tpc8033-h.pdf
TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8033-H High Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge QSW = 9.6 nC (typ.) Low drain-source ON-resistance RDS (ON) = 4.0 m (
tpc8037-h.pdf
TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 5.0 nC (typ.) Low drain-source ON-resistance RDS (ON) = 7.6 m
Otros transistores... TPC8024-H , TPC8025 , TPC8026 , TPC8030 , TPC8031-H , TPC8032-H , TPC8033-H , TPC8034-H , IRF3710 , TPC8036-H , TPC8037-H , TPC8038-H , TPC8039-H , TPC8040-H , TPC8054-H , TPC8060-H , TPC8104-H .
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