TPC8036-H Todos los transistores

 

TPC8036-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC8036-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 690 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: SOP8
 

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TPC8036-H Datasheet (PDF)

 ..1. Size:224K  toshiba
 tpc8036-h.pdf pdf_icon

TPC8036-H

TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: Q = 13 nC (typ.) SW Low drain-source ON-resistance: R = 3.1 m (typ.

 8.1. Size:223K  toshiba
 tpc8033-h.pdf pdf_icon

TPC8036-H

TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8033-H High Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 9.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.0 m (

 8.2. Size:225K  toshiba
 tpc8037-h.pdf pdf_icon

TPC8036-H

TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m

 8.3. Size:235K  toshiba
 tpc8032-h.pdf pdf_icon

TPC8036-H

TPC8032-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8032-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.0 m

MOSTRAR MÁS

Otros transistores... TPC8025 , TPC8026 , TPC8030 , TPC8031-H , TPC8032-H , TPC8033-H , TPC8034-H , TPC8035-H , IRFB4227 , TPC8037-H , TPC8038-H , TPC8039-H , TPC8040-H , TPC8054-H , TPC8060-H , TPC8104-H , TPC8105-H .

History: F501 | LPM9926SOF | IRF7469PBF | UPA2351T1G

 

 
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