TPC8104-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPC8104-H
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET TPC8104-H

TPC8104-H Datasheet (PDF)

..1. Size:315K toshiba
tpc8104-h.pdf

TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8104-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 17 nC (typ.) Low drain-source ON resistan

7.1. Size:1400K cn vbsemi
tpc8104.pdf

TPC8104www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop V

8.1. Size:215K toshiba
tpc8108.pdf

TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 9.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 24 S (typ.) fs Low leakage

8.2. Size:320K toshiba
tpc8105-h.pdf

TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) TPC8105-H High Speed and High Efficiency DC-DC Converters Unit: mmLithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge : Qg = 32 nC (typ.) Low drain-source ON resistan

8.3. Size:224K toshiba
tpc8107.pdf

TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 5.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 31 S (typ.) fs Low leakage

8.4. Size:215K toshiba
tpc8109.pdf

TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8109 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 14 m (typ.) DS (ON) High forward transfer admittance: |Y | = 19 S (typ.) fs Low leakage c

8.5. Size:865K cn vbsemi
tpc8103.pdf

TPC8103www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

8.6. Size:818K cn vbsemi
tpc8107.pdf

TPC8107www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: