TPC8110 Todos los transistores

 ..1. Size:216K  toshiba
 tpc8110.pdf

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 17 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage

 8.1. Size:214K  toshiba
 tpc8117.pdf

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8117 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 54 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -

 8.2. Size:278K  toshiba
 tpc8114.pdf

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8114 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) High forward transfer admittance Yfs = 47 S (typ.) Low leakage curre

 8.3. Size:274K  toshiba
 tpc8112.pdf

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8112 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.0m (typ.) High forward transfer admittance Yfs = 31 S (typ.) Low leakage curren

 8.4. Size:280K  toshiba
 tpc8115.pdf

 8.5. Size:279K  toshiba
 tpc8116-h.pdf

TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge QSW = 9.7 nC (typ.) Low

 8.6. Size:231K  toshiba
 tpc8111.pdf

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 8.1 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage curre

 8.7. Size:256K  toshiba
 tpc8119.pdf

TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit mm Load switch Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 10 m (typ.) High forward transfer admittance Yfs = 24 S (typ.) Low leakage current IDSS

 8.8. Size:196K  toshiba
 tpc8118.pdf

TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8118 Notebook PC Applications Unit mm Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -

 8.9. Size:273K  toshiba
 tpc8113.pdf

TPC8113 P MOS (U-MOS IV) TPC8113 2 mm PC RDS (ON) = 8 m ( ) Yfs = 23 S (