TPC8115 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:280K toshiba
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TPC8115 PMOS (U-MOS IV) TPC8115 2 : mm PC : RDS (ON) = 6.5 m () : |Yfs| = 40 S (

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TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8117 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 3.0 m (typ.) High forward transfer admittance : |Yfs| = 54 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -

8.2. Size:216K toshiba
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TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 17 m (typ.) DS (ON) High forward transfer admittance: |Y | = 16 S (typ.) fs Low leakage

8.3. Size:278K toshiba
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TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8114 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage curre

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TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8112 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.0m (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage curren

8.5. Size:279K toshiba
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TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 9.7 nC (typ.) Low

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TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage curre

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TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit: mmLoad switch Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS

8.8. Size:196K toshiba
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TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8118 Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -

8.9. Size:273K toshiba
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