TPC8209 Todos los transistores

 

TPC8209 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC8209
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SOP8
 

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TPC8209 Datasheet (PDF)

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TPC8209

TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPC8209 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current:

 ..2. Size:894K  cn vbsemi
 tpc8209.pdf pdf_icon

TPC8209

TPC8209www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 8.1. Size:215K  toshiba
 tpc8208.pdf pdf_icon

TPC8209

TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 6.3 S (typ.) Low leakage curre

 8.2. Size:219K  toshiba
 tpc8206.pdf pdf_icon

TPC8209

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 40 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage c

MOSTRAR MÁS

Otros transistores... TPC8118 , TPC8119 , TPC8121 , TPC8122 , TPC8203 , TPC8206 , TPC8207 , TPC8208 , IRF530 , TPC8210 , TPC8211 , TPC8212-H , TPC8213-H , TPC8214-H , TPC8216-H , TPC8218-H , TPC8301 .

History: 9N25A | AOB11S65L | FM400TU-07A | RQ1E075XN | SPP80N06S2L-H5 | SWH15P02

 

 
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