TPC8404 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8404
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.1(0.9) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VQgⓘ - Carga de la puerta: 12 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7(2.55) Ohm
Paquete / Cubierta: SOP8
- Selección de transistores por parámetros
TPC8404 Datasheet (PDF)
tpc8404.pdf

TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel -MOSV/N Channel -MOSV) TPC8404 Motor Dreive Unit: mmSwitching Regulator Applications Low drain-source ON resistance: P Channel RDS (ON) = 1.85 (typ.) N Channel RDS (ON) = 1.2 (typ.) High forward transfer admittance: P Channel |Yfs| = 1.1 S (typ.) N Channel |Yfs| = 1.3 S (ty
tpc8407.pdf

TPC8407MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8407TPC8407TPC8407TPC84071. Applications1. Applications1. Applications1. Applications Motor Drivers CCFL Inverters Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistance
tpc8406-h.pdf

TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-ChannelN-Channel Ultra-High-Speed U-MOSIII) TPC8406-H High Efficiency DCDC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Low drain-source ON-resi
tpc8401.pdf

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mmNotebook PCs Low drain-source ON resistance : P Channel RDS (ON) = 27 m (typ.) N Channel R = 14 m (typ.) DS (ON) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRFR9214 | GSM2341 | RRL025P03 | BSS123A
History: IRFR9214 | GSM2341 | RRL025P03 | BSS123A



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