TPC8406-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPC8406-H
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027(0.03) Ohm
   Paquete / Cubierta: SOP8

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TPC8406-H Datasheet (PDF)

..1. Size:303K toshiba
tpc8406-h.pdf

TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-ChannelN-Channel Ultra-High-Speed U-MOSIII) TPC8406-H High Efficiency DCDC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Low drain-source ON-resi

8.1. Size:376K toshiba
tpc8407.pdf

TPC8407MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8407TPC8407TPC8407TPC84071. Applications1. Applications1. Applications1. Applications Motor Drivers CCFL Inverters Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistance

8.2. Size:484K toshiba
tpc8401.pdf

TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mmNotebook PCs Low drain-source ON resistance : P Channel RDS (ON) = 27 m (typ.) N Channel R = 14 m (typ.) DS (ON) High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel

8.3. Size:349K toshiba
tpc8404.pdf

TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (P Channel -MOSV/N Channel -MOSV) TPC8404 Motor Dreive Unit: mmSwitching Regulator Applications Low drain-source ON resistance: P Channel RDS (ON) = 1.85 (typ.) N Channel RDS (ON) = 1.2 (typ.) High forward transfer admittance: P Channel |Yfs| = 1.1 S (typ.) N Channel |Yfs| = 1.3 S (ty

8.4. Size:376K toshiba
tpc8408.pdf

TPC8408MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)TPC8408TPC8408TPC8408TPC84081. Applications1. Applications1. Applications1. Applications Mobile Equipments Motor Drivers2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High speed switching(3) Low drain-source on-resistanceP-channel RDS(ON) =

8.5. Size:288K toshiba
tpc8405.pdf

TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U-MOS IV/N Channel U-MOS III) TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 25 m (typ.) N Channel RDS (ON) = 20 m (typ.) High forward transfer admittance : P Cha

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