TPC8406-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8406-H
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.5 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Resistencia entre drenaje y fuente RDS(on): 0.027(0.03) Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET TPC8406-H
TPC8406-H Datasheet (PDF)
tpc8406-h.pdf
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tpc8404.pdf
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tpc8408.pdf
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tpc8405.pdf
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TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U-MOS IV/N Channel U-MOS III) TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 25 m (typ.) N Channel RDS (ON) = 20 m (typ.) High forward transfer admittance : P Cha
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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Liste
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