TPC8A07-H Todos los transistores

 ..1. Size:279K  toshiba
 tpc8a07-h.pdf

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge (Q1) QSW = 3.4 nC (typ.) (Q2) QSW =

 8.1. Size:316K  toshiba
 tpc8a01.pdf

TPC8A01 Q1 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) Q2 TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) TPC8A01 Unit mm DC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage V =0.6V(Max.) DSF Small footprint due to

 8.2. Size:217K  toshiba
 tpc8a04-h.pdf

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 13 nC (ty

 8.3. Size:234K  toshiba
 tpc8a06-h.pdf

TPC8A06-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A06-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage V = 0.6 V (max) DSF High-speed switching Small gate charge QSW = 4.5

 8.4. Size:255K  toshiba
 tpc8a02-h.pdf

TPC8A02-H OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPC8A02-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable-Equipment Applications Built-in Schottky barrier diode Low forward voltage V = 0.6V (max) DSF High-speed switching. Small gate

 8.5. Size:213K  toshiba
 tpc8a03-h.pdf

TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A03-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 8.4 nC (t

 8.6. Size:231K  toshiba
 tpc8a05-h.pdf

TPC8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A05-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage V = 0.6 V (max) DSF High-speed switching Small gate charge QSW = 3.7