TPC8A07-H Todos los transistores

 

TPC8A07-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC8A07-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: SOP8
 

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TPC8A07-H Datasheet (PDF)

 ..1. Size:279K  toshiba
 tpc8a07-h.pdf pdf_icon

TPC8A07-H

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ.) (Q2) QSW =

 8.1. Size:316K  toshiba
 tpc8a01.pdf pdf_icon

TPC8A07-H

TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) TPC8A01 Unit: mmDC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage: V =0.6V(Max.) DSF Small footprint due to

 8.2. Size:217K  toshiba
 tpc8a04-h.pdf pdf_icon

TPC8A07-H

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 13 nC (ty

 8.3. Size:234K  toshiba
 tpc8a06-h.pdf pdf_icon

TPC8A07-H

TPC8A06-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A06-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage: V = 0.6 V (max) DSF High-speed switching Small gate charge: QSW = 4.5

MOSTRAR MÁS

Otros transistores... TPC8302 , TPC8303 , TPC8401 , TPC8404 , TPC8405 , TPC8406-H , TPC8A01 , TPC8A02-H , 13N50 , TPCA8003-H , TPCA8004-H , TPCA8005-H , TPCA8009-H , TPCA8012-H , TPCA8014-H , TPCA8015-H , TPCA8016-H .

History: HGN035N10AL | STD7N80K5

 

 
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