TPCA8009-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8009-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 10 nC
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Paquete / Cubierta: SOP-ADVANCE
Búsqueda de reemplazo de MOSFET TPCA8009-H
TPCA8009-H Datasheet (PDF)
tpca8009-h.pdf
TPCA8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCA8009-H High Speed Switching Applications Unit: mmSwitching Regulator Applications 0.40.11.270.05 M ADC/DC Converter Applications 8 50.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: Q = 3.7 nC (typ.)
tpca8004-h.pdf
TPCA8004-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCA8004-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.40.11.27Portable Equipment Applications 0.50.10.05 M A8 5 Small footprint due to small and thin package 0.150.05 High speed switching Small gate charge: Qg =37
tpca8005-h.pdf
TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TENTATIVE TPCA8005-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to small and thin package High speed switching 41 0.595
tpca8008-h.pdf
TPCA8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCA8008-H High Speed Switching Applications Unit: mmSwitching Regulator Applications 0.40.11.270.05 M ADC/DC Converter Applications 8 50.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 3.7 nC (typ.)
tpca8003-h.pdf
TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCA8003-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to small and thin package High speed switching 41 0.595 Small gate c
tpca8006-h.pdf
TPCA8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVII) TPCA8006-H Switching Regulator Applications Unit: mmMotor Drive Applications 0.40.11.270.05 M A8 5DCDC Converter Applications 0.150.05 Small footprint due to a small and thin package High speed switching 41 0.595 Low drain-source ON-resistance A RDS (ON) = 41 m
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100