TPCA8019-H Todos los transistores

 

TPCA8019-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCA8019-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.8 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: SOP-ADVANCE
     - Selección de transistores por parámetros

 

TPCA8019-H Datasheet (PDF)

 ..1. Size:195K  toshiba
tpca8019-h.pdf pdf_icon

TPCA8019-H

TPCA8019-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8019-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 15

 7.1. Size:196K  toshiba
tpca8015-h.pdf pdf_icon

TPCA8019-H

TPCA8015-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8015-H High-Efficiency DC-DC Converter Applications Unit: mm1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to a small and thin package 0.15 0.05 High-speed switching Small gate charge: QSW = 13 nC (typ.) 40.595 1 Low drain-source ON-resistance:

 7.2. Size:287K  toshiba
tpca8014-h.pdf pdf_icon

TPCA8019-H

TPCA8014-H NMOS (U-MOSIII) TPCA8014-H DCDC : mm PC 0.40.11.270.50.10.05 M A8 5 0.150.05 41 0.595

 7.3. Size:195K  toshiba
tpca8018-h.pdf pdf_icon

TPCA8019-H

TPCA8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8018-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 9.3

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History: NTB6410AN | SDF1NA60

 

 
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