TPCA8021-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8021-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 27 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 VQgⓘ - Carga de la puerta: 13 nC
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 525 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: SOP-ADVANCE
Búsqueda de reemplazo de MOSFET TPCA8021-H
TPCA8021-H Datasheet (PDF)
tpca8021-h.pdf
TPCA8021-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8021-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.40.11.27Portable Equipment Applications 0.50.10.05 M A8 5 Small footprint due to a small and thin package 0.150.05 High speed switching Small gate charge: QSW =
tpca8020-h.pdf
TPCA8020-H NMOS (U-MOSIII) TPCA8020-H DCDC : mm PC 0.40.11.270.50.10.05 M A8 5 CCFL 0.150.05 41 0.595
tpca8027-h.pdf
TPCA8027-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS) TPCA8027-H Switching Regulator Applications Motor Drive Applications Unit: mm0.40.11.270.50.10.05 M A Small footprint due to a small and thin package 8 5 High-speed switching Small gate charge: QSW = 8.1 nC (typ.) 0.150.05 Low drain-source ON-resist
tpca8028-h.pdf
TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8028-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications Small footprint due to a small and thin package 0.150.05 High-speed switching Small gate charge: QSW = 20 nC (typ.)
tpca8026.pdf
TPCA8026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCA8026 Lithium-Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 1.8 m (typ.) 40.595 1 High forwa
tpca8024.pdf
TPCA8024 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCA8024 Lithium-Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 Portable Equipment Applications 8 0.05 M A 5 0.15 0.05 Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 3.5 m (typ.) 4 High forward transfer
tpca8025.pdf
TPCA8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCA8025 Lithium-Ion Battery Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A 5 Portable Equipment Applications 0.15 0.05 Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) 40.595 1 High forwar
tpca8023-h.pdf
TPCA8023-H NMOS (U-MOS-H) TPCA8023-H DC/DC : mm PC 0.40.11.270.50.10.05 M A 8 50.150.05 41 0.595
tpca8022-h.pdf
TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8022-H Switching Regulator Applications Unit: mmMotor Drive Applications 0.40.11.270.05 M A8 5DC/DC Converter Applications 0.150.05 Small footprint due to a small and thin package High speed switching 41 0.595 Low drain-source ON-resistance A R
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100