TPCA8060-H Todos los transistores

 

TPCA8060-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCA8060-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 45 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
   Carga de la puerta (Qg): 34 nC
   Tiempo de subida (tr): 5.1 nS
   Conductancia de drenaje-sustrato (Cd): 860 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0034 Ohm
   Paquete / Cubierta: SOP-ADVANCE

 Búsqueda de reemplazo de MOSFET TPCA8060-H

 

TPCA8060-H Datasheet (PDF)

 ..1. Size:207K  toshiba
tpca8060-h.pdf

TPCA8060-H
TPCA8060-H

TPCA8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8060-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 1.27 0.4 0.1 8 0.05 M A Portable Equipment Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 40.595 Small gate charge: QSW = 17nC (t

 7.1. Size:234K  toshiba
tpca8063-h.pdf

TPCA8060-H
TPCA8060-H

TPCA8063-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCA8063-HTPCA8063-HTPCA8063-HTPCA8063-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.9 nC (typ.)(

 7.2. Size:228K  toshiba
tpca8068-h.pdf

TPCA8060-H
TPCA8060-H

TPCA8068-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCA8068-HTPCA8068-HTPCA8068-HTPCA8068-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.3 nC (typ.)(

 7.3. Size:269K  toshiba
tpca8064-h.pdf

TPCA8060-H
TPCA8060-H

TPCA8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCA8064-HTPCA8064-HTPCA8064-HTPCA8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate ch

 7.4. Size:233K  toshiba
tpca8062-h.pdf

TPCA8060-H
TPCA8060-H

TPCA8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCA8062-HTPCA8062-HTPCA8062-HTPCA8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate ch

 7.5. Size:237K  toshiba
tpca8065-h.pdf

TPCA8060-H
TPCA8060-H

TPCA8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPCA8065-HTPCA8065-HTPCA8065-HTPCA8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate ch

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