TPCC8102 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8102
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.1 nS
Cossⓘ - Capacitancia de salida: 370 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0189 Ohm
Encapsulados: TSON-ADVANCE
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TPCC8102 datasheet
tpcc8102.pdf
TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCC8102 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 t
tpcc8107.pdf
TPCC8107 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8107 TPCC8107 TPCC8107 TPCC8107 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 23.5 m (typ.) (VGS = -10 V) (3) Low
tpcc8106.pdf
TPCC8106 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8106 TPCC8106 TPCC8106 TPCC8106 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 9.5 m (typ.) (VGS = -10 V) (3) Low
tpcc8104.pdf
TPCC8104 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8104 TPCC8104 TPCC8104 TPCC8104 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 6.8 m (typ.) (V
Otros transistores... TPCA8106 , TPCA8121 , TPCA8A01-H , TPCC8001-H , TPCC8002-H , TPCC8003-H , TPCC8005-H , TPCC8006-H , IRF730 , TPCF8001 , TPCF8102 , TPCF8103 , TPCF8104 , TPCF8302 , TPCF8303 , TPCL4201 , TPCL4202 .
History: BSZ014NE2LS5IF | BUK129-50DL
History: BSZ014NE2LS5IF | BUK129-50DL
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