TPCC8102 Todos los transistores

 

TPCC8102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCC8102
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.1 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0189 Ohm
   Paquete / Cubierta: TSON-ADVANCE
     - Selección de transistores por parámetros

 

TPCC8102 Datasheet (PDF)

 ..1. Size:223K  toshiba
tpcc8102.pdf pdf_icon

TPCC8102

TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8102 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 t

 7.1. Size:237K  toshiba
tpcc8107.pdf pdf_icon

TPCC8102

TPCC8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8107TPCC8107TPCC8107TPCC81071. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 23.5 m (typ.) (VGS = -10 V)(3) Low

 7.2. Size:234K  toshiba
tpcc8106.pdf pdf_icon

TPCC8102

TPCC8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8106TPCC8106TPCC8106TPCC81061. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = -10 V)(3) Low

 7.3. Size:231K  toshiba
tpcc8104.pdf pdf_icon

TPCC8102

TPCC8104MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8104TPCC8104TPCC8104TPCC81041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (V

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History: SDF1NA60 | FCP290N80 | NTB6410AN

 

 
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