TPCC8102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8102
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.1 nS
Cossⓘ - Capacitancia de salida: 370 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0189 Ohm
Paquete / Cubierta: TSON-ADVANCE
- Selección de transistores por parámetros
TPCC8102 Datasheet (PDF)
tpcc8102.pdf

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