TPCC8102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCC8102
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.1 nS
Cossⓘ - Capacitancia de salida: 370 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0189 Ohm
Paquete / Cubierta: TSON-ADVANCE
Búsqueda de reemplazo de TPCC8102 MOSFET
TPCC8102 Datasheet (PDF)
tpcc8102.pdf

TPCC8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) TPCC8102 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 14.5 m (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 t
tpcc8107.pdf

TPCC8107MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8107TPCC8107TPCC8107TPCC81071. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 23.5 m (typ.) (VGS = -10 V)(3) Low
tpcc8106.pdf

TPCC8106MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8106TPCC8106TPCC8106TPCC81061. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = -10 V)(3) Low
tpcc8104.pdf

TPCC8104MOSFETs Silicon P-Channel MOS (U-MOS)TPCC8104TPCC8104TPCC8104TPCC81041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 6.8 m (typ.) (V
Otros transistores... TPCA8106 , TPCA8121 , TPCA8A01-H , TPCC8001-H , TPCC8002-H , TPCC8003-H , TPCC8005-H , TPCC8006-H , BS170 , TPCF8001 , TPCF8102 , TPCF8103 , TPCF8104 , TPCF8302 , TPCF8303 , TPCL4201 , TPCL4202 .
History: HGP042N10A | MTP2N60E | IRF7726PBF | 2N7002NXAK | MPSC60M160 | HM3205D | 2SJ109
History: HGP042N10A | MTP2N60E | IRF7726PBF | 2N7002NXAK | MPSC60M160 | HM3205D | 2SJ109



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
2sc3264 | mp38a | bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent | tip31 | tip122 transistor