TPCL4203 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCL4203
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.65 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 85 nS
Cossⓘ - Capacitancia de salida: 145 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Paquete / Cubierta: CHIPLGA
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TPCL4203 Datasheet (PDF)
tpcl4203.pdf

TPCL4203MOSFETs Silicon N-Channel MOS (U-MOS)TPCL4203TPCL4203TPCL4203TPCL42031. Applications1. Applications1. Applications1. Applications Dedicated to Single-Cell Lithium-Ion Secondary Battery ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Small, thin package(2
tpcl4202.pdf

TPCL4202MOSFETs Silicon N-Channel MOS (U-MOS)TPCL4202TPCL4202TPCL4202TPCL42021. Applications1. Applications1. Applications1. Applications Dedicated to Single-Cell Lithium-Ion Secondary Battery ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Small, thin package(2
tpcl4201.pdf

TPCL4201MOSFETs Silicon N-Channel MOS (U-MOS)TPCL4201TPCL4201TPCL4201TPCL42011. Applications1. Applications1. Applications1. Applications Dedicated to Single-Cell Lithium-Ion Secondary Battery ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Small, thin package(2
Otros transistores... TPCF8001 , TPCF8102 , TPCF8103 , TPCF8104 , TPCF8302 , TPCF8303 , TPCL4201 , TPCL4202 , IRF640 , TPCM8001-H , TPCM8002-H , TPCM8003-H , TPCM8004-H , TPCM8006 , TPCM8102 , TPCM8A05-H , TPCP8001-H .
History: CSD13306W
History: CSD13306W



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