TPCM8A05-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCM8A05-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.2 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0129 Ohm
Encapsulados: TSSOP-ADVANCE
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TPCM8A05-H datasheet
tpcm8a05-h.pdf
TPCM8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCM8A05-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A Portable Equipment Applications 8 5 Built-in a schottky barrier diode 0.2 0 0.2 Low forward voltage V = 0.6 V (Max.) DSF H
tpcm8001-h.pdf
TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A 8 5 Portable-Equipment Applications 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate char
tpcm8006.pdf
TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit mm Portable Equipment Applications 0.25 0.05 0.8 0.05 M A 8 5 Small footprint due to a small and thin package 0.2 0 0.2 Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer adm
Otros transistores... TPCL4202 , TPCL4203 , TPCM8001-H , TPCM8002-H , TPCM8003-H , TPCM8004-H , TPCM8006 , TPCM8102 , IRFP260N , TPCP8001-H , TPCP8002 , TPCP8201 , TPCP8202 , TPCP8301 , TPCP8302 , TPCP8402 , TPCP8403 .
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