TPCP8302 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCP8302
Código: 8302
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 20 nC
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Paquete / Cubierta: PS8
- Selección de transistores por parámetros
TPCP8302 Datasheet (PDF)
tpcp8302.pdf
TPCP8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8302 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) 0.475 1 4 High forward transfer admittance: |Yfs
tpcp8305.pdf
TPCP8305MOSFETs Silicon P-Channel MOS (U-MOS)TPCP8305TPCP8305TPCP8305TPCP83051. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 23 m (typ.) (VG
tpcp8303.pdf
TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Unit: mmLithium Ion Battery Applications 0.330.05Notebook PC Applications 0.05 M A 8 5Portable Equipment Applications Low drain-source ON-resistance: RDS(ON) = 41 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) 0.475 1 4 Low leakage current: IDSS = -10
tpcp8301.pdf
TPCP8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPCP8301 Lithium Ion Battery Applications Unit: mmNotebook PC Applications 0.330.05Portable Equipment Applications 0.05 M A 8 5 Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 m (typ.) High forward transfer admittan
Otros transistores... TPCM8006 , TPCM8102 , TPCM8A05-H , TPCP8001-H , TPCP8002 , TPCP8201 , TPCP8202 , TPCP8301 , IRF9540 , TPCP8402 , TPCP8403 , TPCS8004 , TPCS8006 , TPCS8007-H , TPCS8008-H , TPCS8009-H , TPCS8101 .
History: TPCA8A01-H | TPCA8030-H | TPCF8B01
History: TPCA8A01-H | TPCA8030-H | TPCF8B01
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