2SJ148 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ148
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 48 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: TO92
Búsqueda de reemplazo de 2SJ148 MOSFET
2SJ148 Datasheet (PDF)
2sj148.pdf

2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs Low on resistance: R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK9
2sj144.pdf

2SJ144 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ144 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V (min) High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON)
2sj146.pdf

Silicon MOS FETs (Small Signal) 2SJ1462SJ146Silicon P-Channel MOSUnit : mmFor switching+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching1 Downsizing of sets by mini-type package and automatic insertion bytaping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Drai
Otros transistores... TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , TPCT4201 , TPCT4202 , TPCT4203 , TPCT4204 , IRF1407 , 2SJ167 , 2SJ342 , 2SK1061 , 2SK1825 , 2SK982 , SSM3J15TE , SSM3J16TE , SSM3K03FE .
History: IXFA16N50P | 2SK1061
History: IXFA16N50P | 2SK1061



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