2SK1061 Todos los transistores

 ..1. Size:293K  toshiba
 2sk1061.pdf

2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching times ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 0.6 (typ.) DS (ON) Enhancement-mode Complementary to 2

 8.1. Size:333K  toshiba
 2sk1062.pdf

2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Unit mm Analog Switching Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = 50 mA D Low on resistance R = 0.6 (typ.) @ I = 50 mA DS (ON) D Enhanceme

 8.2. Size:302K  sanyo
 2sk1066.pdf

Ordering number EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions High-frequency general-purpose amplifier. unit mm AM tuner RF amplifier. 2058 Low-noise amplifier. [2SK1066] 0.3 Features 0.15 3 Large yfs . 0 to 0.1 Small Crss. Ultralow noise figure. Ultrasmal

 8.3. Size:42K  sanyo
 2sk1065.pdf

Ordering number ENN2746A N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ultrasmall package facilitates miniaturization in end unit mm products. 2057A Small Crss (Crss=0.04pF typ). [2SK1065] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Gate 2 Drain 3 Source SANYO MCP Specific

 8.4. Size:143K  sanyo
 2sk1067.pdf

Ordering number EN2719 N-Channel Silicon MOSFET 2SK1067 FM Tuner, VHF-Band Amplifier Applications Features Package Dimensions Low noise NF=1.8dB typ (f=100MHz). unit mm High power gain PG=27dB typ (f=100MHz). 2057 Small reverse transfer capacitance Crss=0.035pF [2SK1067] (VDS=10V, f=1MHz). Ultrasmall-sized package (MCP) permitting 0.3 0.15 2SK1067-applied sets to

 8.5. Size:94K  sanyo
 2sk1068.pdf

Ordering number EN2748 N-Channel Junction Silicon FET 2SK1068 Impedance Conversion Applications Applications Package Dimensions Impedance conversion. unit mm Infrared sensor. 2058 [2SK1068] Features 0.3 Small IGSS. 0.15 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK1068- applied sets to be made smaller and slimmer. 1 2 0.3 0.6 0.65 0.65

 8.6. Size:98K  sanyo
 2sk1069.pdf

Ordering number EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency general-purpose amplifiers. unit mm Ideal for use in variable resistors, analog switches, 2058 low-frequency amplifiers, and constant-current [2SK1069] circuits. 0.3 0.15 3 Features 0 to 0.1 Adoption of FBE

 8.7. Size:302K  nec
 2sk1060.pdf

 8.8. Size:299K  nec
 2sk1060-z.pdf

 8.9. Size:44K  inchange semiconductor
 2sk1064.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1064 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor s B+ f

 8.10. Size:44K  inchange semiconductor
 2sk1063.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1063 DESCRIPTION Drain Current ID=15A@ TC=25 Drain Source Voltage- VDSS= 450V(Min) Fast Switching Speed APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor s B+ f