2SK982 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK982
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO92
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2SK982 Datasheet (PDF)
2sk982.pdf
2SK982 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK982 High Speed Switching Applications Unit: mmAnalog Switch Applications Interface Applications Excellent switching times: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = 50 mA D Low on resistance: RDS (ON) = 0.6 (typ.) @ ID = 50 mA Enhancement-mode
2sk981 2sk981a.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request
2sk987.pdf
isc N-Channel MOSFET Transistor 2SK987DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 5
Otros transistores... TPCT4202 , TPCT4203 , TPCT4204 , 2SJ148 , 2SJ167 , 2SJ342 , 2SK1061 , 2SK1825 , AON7506 , SSM3J15TE , SSM3J16TE , SSM3K03FE , SSM3K03FV , SSM3K03TE , SSM3K04FE , SSM3K04FS , SSM3K04FU .
History: FDP085N10AF102
History: FDP085N10AF102
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