SSM3K7002AF Todos los transistores

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 ssm3k7002af.pdf

SSM3K7002AF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AF High-Speed Switching Applications Unit mm Analog Switch Applications +0.5 2.5-0.3 Small package +0.25 1.5-0.15 Low ON-resistance Ron = 3.3 (max) (@VGS = 4.5 V) Ron = 3.2 (max) (@VGS = 5 V) 1 Ron = 3.0 (max) (@VGS = 10 V) 2 3 Absolute Maximum Ratings (Ta = 25 C)

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 ssm3k7002afu.pdf

SSM3K7002AFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AFU High-Speed Switching Applications Unit mm Analog Switch Applications Small package 2.1 0.1 Low ON-resistance Ron = 3.3 (max) (@VGS = 4.5 V) 1.25 0.1 Ron = 3.2 (max) (@VGS = 5 V) Ron = 3.0 (max) (@VGS = 10 V) 1 Absolute Maximum Ratings (Ta = 25 C) 23 Characteri

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 ssm3k7002fu.pdf

SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications Unit mm 2.1 0.1 Small package 1.25 0.1 Low ON resistance Ron = 3.3 (max) (@VGS = 4.5 V) Ron = 3.2 (max) (@VGS = 5 V) Ron = 3.0 (max) (@VGS = 10 V) 1 2 3 Maximum Ratings (Ta = 25 C) Characteris

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 ssm3k7002cfu.pdf

SSM3K7002CFU MOSFETs Silicon N-Channel MOS SSM3K7002CFU SSM3K7002CFU SSM3K7002CFU SSM3K7002CFU 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) Gate-Source diode for protection (2) Low drain-source on-resistance RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t

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 ssm3k7002bfu.pdf

SSM3K7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM3K7002BFU High-Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) RDS(ON) = 2.6 (max) (@VGS = 5 V) RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics

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 ssm3k7002bf.pdf

SSM3K7002BF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM3K7002BF High-Speed Switching Applications Analog Switch Applications Unit mm Small package +0.5 2.5-0.3 Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) +0.25 1.5-0.15 RDS(ON) = 2.6 (max) (@VGS = 5 V) RDS(ON) = 2.1 (max) (@VGS = 10 V) 1 Absolute Maximum Rating

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 ssm3k7002bfs.pdf

SSM3K7002BFS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS ) SSM3K7002BFS High-Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON-resistance RDS(ON) = 3.3 (max) (@VGS = 4.5 V) RDS(ON) = 2.6 (max) (@VGS = 5 V) RDS(ON) = 2.1 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics

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 ssm3k7002f.pdf

SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Unit mm Analog Switch Applications +0.5 2.5-0.3 Small package +0.25 1.5-0.15 Low ON-resistance Ron = 3.3 (max) (@VGS = 4.5 V) Ron = 3.2 (max) (@VGS = 5 V) 1 Ron = 3.0 (max) (@VGS = 10 V) 2 3 Maximum Ratings (Ta = 25 C) Charact

 5.7. Size:888K  cn vbsemi
 ssm3k7002f.pdf

SSM3K7002F www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G