2SJ144 Todos los transistores

 

2SJ144 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ144
   Tipo de FET: JFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 0.014 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 270 Ohm
   Paquete / Cubierta: USM SC70
     - Selección de transistores por parámetros

 

2SJ144 Datasheet (PDF)

 ..1. Size:293K  toshiba
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2SJ144

2SJ144 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ144 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V (min) High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON)

 9.1. Size:282K  toshiba
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2SJ144

2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs Low on resistance: R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK9

 9.2. Size:161K  nec
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2SJ144

 9.3. Size:29K  panasonic
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2SJ144

Silicon MOS FETs (Small Signal) 2SJ1462SJ146Silicon P-Channel MOSUnit : mmFor switching+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching1 Downsizing of sets by mini-type package and automatic insertion bytaping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Drai

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History: AF5N60S | LSF60R240HT | 2SK2071-01L | ATM2N65TE | BUK9Y58-75B | SVD4N65F | IXFH16N60P3

 

 
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