2SK170 Todos los transistores

 

2SK170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK170

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 40 V

Corriente continua de drenaje (Id): 0.02 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 55 Ohm

Empaquetado / Estuche: TO92

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2SK170 Datasheet (PDF)

1.1. 2sk170.pdf Size:318K _toshiba

2SK170
2SK170

2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = -40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)

1.2. 2sk1701.pdf Size:212K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1701 DESCRIPTION ·Drain Current –I = 8A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching. ·Low drive current. ·Suitable for motor control, switching regulator and DC – DC converter. ABSOLUTE MAXIMUM RATING

 1.3. 2sk1703.pdf Size:212K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1703 DESCRIPTION ·Drain Current –I = 5A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching. ·Low drive current. ·Suitable for motor control, switching regulator and DC – DC converter. ABSOLUTE MAXIMUM RATINGS

1.4. 2sk1708.pdf Size:209K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1708 DESCRIPTION ·Drain Current I = 4A@ T =25℃ D C ·Drain Source Voltage : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 1.5. 2sk1704.pdf Size:212K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1704 DESCRIPTION ·Drain Current I = 5A@ T =25℃ D C ·Drain Source Voltage : V = 500V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS

1.6. 2sk1707.pdf Size:212K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1707 DESCRIPTION ·Drain Current –I = 4A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drai

1.7. 2sk1709.pdf Size:212K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1709 DESCRIPTION ·Drain Current –I = 6A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drai

1.8. 2sk1706.pdf Size:209K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1706 DESCRIPTION ·Drain Current I = 8A@ T =25℃ D C ·Drain Source Voltage : V = 500V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-So

1.9. 2sk1705.pdf Size:215K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1705 DESCRIPTION ·Drain Current I = 10A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain

1.10. 2sk1700.pdf Size:213K _inchange_semiconductor

2SK170
2SK170

isc N-Channel MOSFET Transistor 2SK1700 DESCRIPTION ·Drain Current –I = 5A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching. ·Low drive current. ·Suitable for motor control, switching regulator and DC – DC converter. ABSOLUTE MAXIMUM RATING

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