2SK170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK170

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente |Vds|: 40 V

Corriente continua de drenaje |Id|: 0.02 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 55 Ohm

Empaquetado / Estuche: TO92

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2SK170 Datasheet (PDF)

0.1. 2sk170.pdf Size:318K _toshiba

2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = -40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)

0.2. 2sk1701.pdf Size:212K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1701DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING

0.3. 2sk1703.pdf Size:212K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1703DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATINGS

0.4. 2sk1708.pdf Size:209K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1708DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

0.5. 2sk1704.pdf Size:212K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1704DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS

0.6. 2sk1707.pdf Size:212K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1707DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

0.7. 2sk1709.pdf Size:212K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1709DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

0.8. 2sk1706.pdf Size:209K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1706DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

0.9. 2sk1705.pdf Size:215K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1705DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Power supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

0.10. 2sk1700.pdf Size:213K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1700DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING

Otros transistores... SSM3K7002AF , SSM6J215FE , 2SJ103 , 2SJ105 , 2SJ106 , 2SJ144 , 2SK117 , 2SK118 , SPA11N60C3 , 2SK184 , 2SK1875 , 2SK208 , 2SK209 , 2SK210 , 2SK211 , 2SK246 , 2SK30ATM .

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