2SK170 Datasheet. Equivalente

 ..1. Size:318K  toshiba
 2sk170.pdf

2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit mm Recommended for first stages of EQ and M.C. head amplifiers. High Yfs Yfs = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage VGDS = -40 V Low noise En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)

 0.1. Size:212K  inchange semiconductor
 2sk1707.pdf

isc N-Channel MOSFET Transistor 2SK1707 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai

 0.2. Size:209K  inchange semiconductor
 2sk1706.pdf

isc N-Channel MOSFET Transistor 2SK1706 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 0.3. Size:215K  inchange semiconductor
 2sk1705.pdf

isc N-Channel MOSFET Transistor 2SK1705 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain

 0.4. Size:212K  inchange semiconductor
 2sk1701.pdf

isc N-Channel MOSFET Transistor 2SK1701 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching. Low drive current. Suitable for motor control, switching regulator and DC DC converter. ABSOLUTE MAXIMUM RATING

 0.5. Size:212K  inchange semiconductor
 2sk1709.pdf

isc N-Channel MOSFET Transistor 2SK1709 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai

 0.6. Size:212K  inchange semiconductor
 2sk1703.pdf

isc N-Channel MOSFET Transistor 2SK1703 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching. Low drive current. Suitable for motor control, switching regulator and DC DC converter. ABSOLUTE MAXIMUM RATINGS

 0.7. Size:209K  inchange semiconductor
 2sk1708.pdf

isc N-Channel MOSFET Transistor 2SK1708 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 0.8. Size:213K  inchange semiconductor
 2sk1700.pdf

isc N-Channel MOSFET Transistor 2SK1700 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching. Low drive current. Suitable for motor control, switching regulator and DC DC converter. ABSOLUTE MAXIMUM RATING

 0.9. Size:212K  inchange semiconductor
 2sk1704.pdf

isc N-Channel MOSFET Transistor 2SK1704 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS