2SK210 Todos los transistores

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2SK210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK210

Código: Y*

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.1 W

Tensión drenaje-fuente (Vds): 18 V

Corriente continua de drenaje (Id): 0.024 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 140 Ohm

Empaquetado / Estuche: SMINI_SC59

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2SK210 Datasheet (PDF)

1.1. 2sk2100-01mr.pdf Size:161K _update

2SK210
2SK210



1.2. 2sk210.pdf Size:361K _toshiba

2SK210
2SK210

2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications Unit: mm VHF Band Amplifier Applications High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gat

1.3. 2sk2108.pdf Size:92K _sanyo

2SK210
2SK210

Ordering number:ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2108] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-22

1.4. 2sk2109.pdf Size:38K _nec

2SK210
2SK210

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2109 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 4.5 ± 0.1 an IC operating at 5 V. 1.5 ± 0.1 1.6 ± 0.2 This product has a low ON resistance and superb switching characteristics and is ide

1.5. 2sk2103 1-5.pdf Size:128K _rohm

2SK210
2SK210

1.6. 2sk2103.pdf Size:127K _rohm

2SK210
2SK210

Transistors Small switching (30V, 2A) 2SK2103 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 98 Transistors 2SK210

1.7. 2sk2101 01mr.pdf Size:175K _fuji

2SK210
2SK210

N-channel MOS-FET 2SK2101-01MR FAP-IIA Series 800V 2,1? 6A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalen

1.8. 2sk2109.pdf Size:672K _kexin

2SK210
2SK210

SMD Type MOSFET N-Channel MOSFET 2SK2109 1.70 0.1 ■ Features ● VDS (V) = 60V ● ID = 0.5A ● RDS(ON) < 1Ω (VGS = 4V) 0.42 0.1 0.46 0.1 Drain (D) ● RDS(ON) < 0.8Ω (VGS = 10V) Gate (G) Internal diode 1.Gate Gate protection 2.Drain diode 3.Source Source (S) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V

Otros transistores... 2SJ144 , 2SK117 , 2SK118 , 2SK170 , 2SK184 , 2SK1875 , 2SK208 , 2SK209 , 40673 , 2SK211 , 2SK246 , 2SK30ATM , 2SK330 , 2SK3376CT , 2SK3376MFV , 2SK3376TK , 2SK3376TV .

 


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