2SK370 Todos los transistores

 ..1. Size:655K  toshiba
 2sk370.pdf

2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit mm Suitable for use as first stage for equalizer and MC head amplifiers. High Yfs Yfs = 22 ms (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage VGDS = -40 V High input impedance IGSS = -1 nA (max) (VGS = -30 V)

 0.1. Size:43K  1
 2sk3706.pdf

Ordering number ENN7766 2SK3706 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3706 Applications Features Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage

 0.2. Size:40K  1
 2sk3705.pdf

Ordering number ENN7705 2SK3705 N-Channl Silicon MOSFET General-Purpose Switching Device 2SK3705 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 0.3. Size:259K  toshiba
 2sk3700.pdf

2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3700 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.0 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Ab

 0.4. Size:35K  sanyo
 2sk3702.pdf

Ordering number ENN7502 2SK3702 N-Channel Silicon MOSFET 2SK3702 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A 4V drive. [2SK3702] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source Specifications 2.55 2.55 SANYO TO-220ML Absolute Maximum Rati

 0.5. Size:38K  sanyo
 2sk3709.pdf

Ordering number ENN8023 2SK3709 N-Channel Silicon MOSFET 2SK3709 General-Purpose Switching Device Applications Features Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage V

 0.6. Size:36K  sanyo
 2sk3707.pdf

Ordering number ENN7706 2SK3707 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3707 Applications Features Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage

 0.7. Size:52K  sanyo
 2sk3703.pdf

Ordering number EN7681A 2SK3703 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3703 Applications Features Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings

 0.8. Size:56K  sanyo
 2sk3704.pdf

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 2sk3708.pdf

Ordering number ENN7707 2SK3708 N-Channel Silicon MOSFET General-Purpose 2SK3708 Switching Device Applications Features Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage

 0.10. Size:262K  onsemi
 2sk3703.pdf

Ordering number EN7681B 2SK3703 N-Channel Power MOSFET http //onsemi.com 60V, 30A, 26m , TO-220F-3SG Features ON-resistance RDS(on)1=20m (typ.) Input capacitance Ciss=1780pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain C

 0.11. Size:279K  inchange semiconductor
 2sk3702.pdf

isc N-Channel MOSFET Transistor 2SK3702 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.12. Size:280K  inchange semiconductor
 2sk3709.pdf

isc N-Channel MOSFET Transistor 2SK3709 FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.13. Size:279K  inchange semiconductor
 2sk3706.pdf

isc N-Channel MOSFET Transistor 2SK3706 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.14. Size:278K  inchange semiconductor
 2sk3707.pdf

isc N-Channel MOSFET Transistor 2SK3707 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.15. Size:251K  inchange semiconductor
 2sk3703.pdf

isc N-Channel MOSFET Transistor 2SK3703 FEATURES Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters AC and DC Motor Dri

 0.16. Size:282K  inchange semiconductor
 2sk3700.pdf

iscN-Channel MOSFET Transistor 2SK3700 FEATURES Low drain-source on-resistance RDS(ON) = 2.5 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 0.17. Size:279K  inchange semiconductor
 2sk3704.pdf

isc N-Channel MOSFET Transistor 2SK3704 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.18. Size:279K  inchange semiconductor
 2sk3708.pdf

isc N-Channel MOSFET Transistor 2SK3708 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.19. Size:279K  inchange semiconductor
 2sk3705.pdf

isc N-Channel MOSFET Transistor 2SK3705 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno