2SK372 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK372 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current Unit: mmand Impedance Converter Applications High breakdown voltage: VGDS = -40 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low R : R = 20 (typ.) (I = 15 mA) DS (ON) DS (ON) DSS Small package Maximum Rating

2SK3726-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

2SK3725-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

2SK3728-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]Features TO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

2SK3727-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle

SMD Type ICSMD Type TransistorsN-channel Enhancement Mode MOSFET2SK3723TO-263Unit: mm+0.24.57-0.21.27+0.1-0.1FeaturesLow on-resistance, low QgHigh avalanche resistance0.1maxFor high-speed switching1.27+0.1-0.1+0.10.81-0.12.541Gate2.54+0.2 +0.2-0.2 +0.15.08-0.1 0.4-0.22Drain3 SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

isc N-Channel MOSFET Transistor 2SK3726-01MRFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

isc N-Channel MOSFET Transistor 2SK3725-01FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

isc N-Channel MOSFET Transistor 2SK3728-01MRFEATURESDrain Current : I = 2.2A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

isc N-Channel MOSFET Transistor 2SK3727-01FEATURESDrain Current : I = 2.2A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol