2SK3857MFV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3857MFV
Código: 9A_9B
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.00035 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1100 Ohm
Paquete / Cubierta: VESM
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2SK3857MFV Datasheet (PDF)
2sk3857tk.pdf
2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 13Characteristic Symbol Rating Unit2Gate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Storag
2sk3857tv.pdf
2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 123Characteristic Symbol Rating UnitGate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Stora
2sk3850.pdf
Ordering number : ENN8193 2SK3850N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3850ApplicationsFeatures Best suited for motor drive. Low ON-resistance. Low Qg.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 0.7 AD
2sk385.pdf
isc N-Channel MOSFET Transistor 2SK385DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage,high speed power Switching.Low leakage Current.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE
2sk3850i.pdf
isc N-Channel MOSFET Transistor 2SK3850IFEATURESDrain Current : I = 0.7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 18.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
2sk3850d.pdf
isc N-Channel MOSFET Transistor 2SK3850DFEATURESDrain Current : I = 0.7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 18.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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