2SK4059MFV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 123Characteristic Symbol Rating UnitGate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Stora

2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Application for compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 1Characteristic Symbol Rating Unit3Gate-Drain voltage VGDO -20 V2Gate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Storage temp

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK4057SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 15.0 m

isc N-Channel MOSFET Transistor 2SK4057FEATURESDrain Current : I = 53A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid