2SK711 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK711
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.032 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 70 Ohm
Paquete / Cubierta: SMINI SC59
Búsqueda de reemplazo de 2SK711 MOSFET
2SK711 datasheet
2sk711.pdf
2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High Yfs Yfs = 25 mS (typ.) Low Ciss Ciss = 7.5 pF (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS -2
2sk715.pdf
Ordering number EN2543 N-Channel Junction Silicon FET 2SK715 AM Tuner, RF Amplifier Applications Applications Package Dimensions AM tuner RF amp, low-noise amp. unit mm HF low-noise amp. 2034A [2SK715] 2.2 4.0 Features Adoption of FBET process. Large yfs . 0.4 0.5 Small Ciss. Very low noise figure. 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate
2sk715u-v-w.pdf
2SK715 N-Channel JFET www.onsemi.com 15V, 7.3 to 24mA, 50mS Applications AM Tuner RF Amp, Low-noise Amp HF Low-noise Amp Features Electrical Connection Marking Adoption of FBET Process Large yfs 2 1 Source K715 Small Ciss 2 Gate LOT No. Very Low Noise Figure 3 Drain Specifications Absolute Maximum Ratings at Ta=25 C 1 3 Parameter Symbol
Otros transistores... 2SK3857CT , 2SK3857MFV , 2SK3857TK , 2SK3857TV , 2SK4059CT , 2SK4059MFV , 2SK4059TK , 2SK4059TV , IRFZ44 , 2SK879 , 2SK880Y , TTK101MFV , TTK101TK , 2SJ181L , 2SJ181S , 2SJ186 , 2SJ216 .
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