2SK711 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK711

Código: RB*

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.15 W

Tensión drenaje-fuente (Vds): 20 V

Corriente continua de drenaje (Id): 0.032 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 70 Ohm

Empaquetado / Estuche: SMINI, SC59

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2SK711 Datasheet (PDF)

1.1. 2sk711.pdf Size:523K _toshiba

2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS (typ.) • Low Ciss: Ciss = 7.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS -2

5.1. 2sk719.pdf Size:341K _update

5.2. 2sk715u-v-w.pdf Size:705K _update

2SK715 N-Channel JFET www.onsemi.com 15V, 7.3 to 24mA, 50mS Applications • AM Tuner RF Amp, Low-noise Amp • HF Low-noise Amp Features Electrical Connection Marking • Adoption of FBET Process • Large yfs 2   1 : Source K715 • Small Ciss 2 : Gate LOT No. • Very Low Noise Figure 3 : Drain Specifications Absolute Maximum Ratings at Ta=25°C 1 3 Parameter Symbol

5.3. 2sk715.pdf Size:90K _sanyo

Ordering number:EN2543 N-Channel Junction Silicon FET 2SK715 AM Tuner, RF Amplifier Applications Applications Package Dimensions � AM tuner RF amp, low-noise amp. unit:mm � HF low-noise amp. 2034A [2SK715] 2.2 4.0 Features � Adoption of FBET process. � Large ? yfs? . 0.4 0.5 � Small Ciss. � Very low noise figure. 0.4 0.4 1 2 3 1 : Source 1.3 1.3 2 : Gate 3 : Drain 3

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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