2SK711 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK711
Código: RB*
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.15 W
Tensión drenaje-fuente (Vds): 20 V
Corriente continua de drenaje (Id): 0.032 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 70 Ohm
Empaquetado / Estuche: SMINI_SC59
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2SK711 Datasheet (PDF)
1.1. 2sk711.pdf 
Size:523K _toshiba
2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS (typ.) • Low Ciss: Ciss = 7.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS -2
5.1. 2sk719.pdf Size:341K _update
5.2. 2sk715u-v-w.pdf Size:705K _update
2SK715 N-Channel JFET www.onsemi.com 15V, 7.3 to 24mA, 50mS Applications • AM Tuner RF Amp, Low-noise Amp • HF Low-noise Amp Features Electrical Connection Marking • Adoption of FBET Process • Large yfs 2 1 : Source K715 • Small Ciss 2 : Gate LOT No. • Very Low Noise Figure 3 : Drain Specifications Absolute Maximum Ratings at Ta=25°C 1 3 Parameter Symbol
5.3. 2sk715.pdf Size:90K _sanyo
Ordering number:EN2543 N-Channel Junction Silicon FET 2SK715 AM Tuner, RF Amplifier Applications Applications Package Dimensions AM tuner RF amp, low-noise amp. unit:mm HF low-noise amp. 2034A [2SK715] 2.2 4.0 Features Adoption of FBET process. Large ? yfs? . 0.4 0.5 Small Ciss. Very low noise figure. 0.4 0.4 1 2 3 1 : Source 1.3 1.3 2 : Gate 3 : Drain 3
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