BUK9614-30 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK9614-30 datasheet

..1. Size:50K philips
buk9614-30 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 69 A Thedevice feat

6.1. Size:56K philips
buk9614-55 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 68 A the device fea

6.2. Size:322K philips
buk9514-55a buk9614-55a.pdf pdf_icon

BUK9514-55A; BUK9614-55A TrenchMOS logic level FET Rev. 01 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

6.3. Size:769K nxp
buk9614-55a.pdf pdf_icon

BUK9614-55A N-channel TrenchMOS logic level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu