2SJ222 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ222
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 35 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1 V
Tiempo de subida (tr): 115 nS
Conductancia de drenaje-sustrato (Cd): 680 pF
Resistencia entre drenaje y fuente RDS(on): 0.16 Ohm
Paquete / Cubierta: TO220FM
Búsqueda de reemplazo de MOSFET 2SJ222
2SJ222 Datasheet (PDF)
2sj222.pdf
2SJ222 Silicon P Channel MOS FET REJ03G0852-0200 (Previous: ADE-208-1186) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES
rej03g0852 2sj222ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj227.pdf
Ordering number:EN3812P-Channel Silicon MOSFET2SJ227Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ227]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO
2sj226.pdf
Ordering number:EN3811P-Channel Silicon MOSFET2SJ226Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ226]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO
2sj229.pdf
Ordering number:EN3814P-Channel Silicon MOSFET2SJ229Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ229]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO
2sj228.pdf
Ordering number:EN3813P-Channel Silicon MOSFET2SJ228Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SJ228]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum R
2sj225.pdf
Ordering number:EN3810P-Channel Silicon MOSFET2SJ225Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SJ225]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum R
2sj221.pdf
2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous: ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES
rej03g0851 2sj221ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj221.pdf
isc P-Channel MOSFET Transistor 2SJ221DESCRIPTIONLow On ResistanceHigh Speed SwitchingLow Drive CurrentMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) -100 VDSS GSV Gate-Source Voltage 20 V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
