2SJ222 Todos los transistores

 ..1. Size:82K  renesas
 2sj222.pdf

2SJ222 Silicon P Channel MOS FET REJ03G0852-0200 (Previous ADE-208-1186) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES

 0.1. Size:95K  renesas
 rej03g0852 2sj222ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:85K  sanyo
 2sj227.pdf

Ordering number EN3812 P-Channel Silicon MOSFET 2SJ227 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ227] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 9.2. Size:84K  sanyo
 2sj226.pdf

Ordering number EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ226] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 9.3. Size:86K  sanyo
 2sj229.pdf

Ordering number EN3814 P-Channel Silicon MOSFET 2SJ229 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ229] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 9.4. Size:92K  sanyo
 2sj228.pdf

Ordering number EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ228] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum R

 9.5. Size:91K  sanyo
 2sj225.pdf

Ordering number EN3810 P-Channel Silicon MOSFET 2SJ225 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ225] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum R

 9.6. Size:81K  renesas
 2sj221.pdf

2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES

 9.7. Size:94K  renesas
 rej03g0851 2sj221ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:173K  hitachi
 2sj220l-s.pdf

 9.9. Size:198K  inchange semiconductor
 2sj221.pdf

isc P-Channel MOSFET Transistor 2SJ221 DESCRIPTION Low On Resistance High Speed Switching Low Drive Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) -100 V DSS GS V Gate-Source Voltage 20 V