2SJ387L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SJ387(L), 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B RENESAS Pack

Ordering number:EN5057P-Channel Silicon MOSFET2SJ382Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 2.5V drive.[2SJ382]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ382]6.5 2.35.0 0.540.5

Ordering number:EN5296AP-Channel Silicon MOSFET2SJ381Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SJ381]4.51.51.60.40.53 2 10.41.53.0 1 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

Ordering number:EN5297AP-Channel Silicon MOSFET2SJ383Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 2.5V drive.[2SJ383]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ383]6.5 2.35.0 0.540.

2SJ389 L , 2SJ389 SSilicon P Channel MOS FETApplicationDPAK24High speed power switching4Features123 Low onresistance2, 4 High speed switching123 Low drive current 4 V gate drive device can be driven from15 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source Avalanche Ratings3 4. Drai

2SJ389Swww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbo

2SJ383www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-Chan

isc P-Channel MOSFET Transistor 2SJ380DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIMUM RATINGS(

isc P-Channel MOSFET Transistor 2SJ389SFEATURESStatic drain-source on-resistance:RDS(on)135m(@V = -10V; I = -5A)GS DHigh speed switchingLow drive current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER