2SJ479L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 25 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) )D

2SJ475-01FUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings

2SJ474-01L,SFUJI POWER MOSFETCharacteristics22SJ474-01L,SFUJI POWER MOSFET32SJ474-01L,SFUJI POWER MOSFET4

FUJI POWER MOSFET2SJ473-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-type S-typeEIAJMaximum ratings and chara

2SJ476-01L,SFUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesT-Pack(L)T-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-typeS-typeEIAJMaximum ratings and char

2SJ477-01MRFUJI POWER MOSFETP-CHANNEL SILICON POWER MOSFETFAP-III SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum rating

FUJI POWER MOSFET2SJ472-01L,SP-CHANNEL SILICON POWER MOSFETFAP-III SERIESOutline DrawingsFeaturesK-Pack(L)K-Pack(S)High speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh forward TransconductanceAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-type S-typeEIAJMaximum ratings and chara

2SJ471Silicon P Channel DVL MOS FETHigh Speed Power SwitchingADE-208-5401st. EditionFeatures Low on-resistanceRDS(on) = 25 m typ. 4V gate drive devices. High speed switchingOutlineTO220CFMDG1231. Gate2. DrainS 3. Source2SJ471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to

Isc P-Channel MOSFET Transistor 2SJ477-01MRFEATURESWith TO-220F packageLow input capacitance and gate chargesLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE