2SJ479L Todos los transistores

 

2SJ479L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ479L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 30 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: LDPAK

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2SJ479L Datasheet (PDF)

1.1. rej03g0866 2sj479lsds.pdf Size:105K _renesas

2SJ479L
2SJ479L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. 2sj479.pdf Size:92K _renesas

2SJ479L
2SJ479L

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 25 m? typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 4 1.

 5.1. 2sj477-01mr.pdf Size:293K _upd

2SJ479L
2SJ479L

2SJ477-01MR FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum rating

5.2. 2sj476-01l-s.pdf Size:302K _upd

2SJ479L
2SJ479L

2SJ476-01L,S FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features T-Pack(L) T-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and char

 5.3. 2sj473-01l-s.pdf Size:236K _upd

2SJ479L
2SJ479L

FUJI POWER MOSFET 2SJ473-01L,S P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack(L) K-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and chara

5.4. 2sj472-01l-s.pdf Size:243K _upd

2SJ479L
2SJ479L

FUJI POWER MOSFET 2SJ472-01L,S P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack(L) K-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type S-type EIAJ Maximum ratings and chara

 5.5. 2sj475-01.pdf Size:295K _upd

2SJ479L
2SJ479L

2SJ475-01 FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings

5.6. 2sj474-01l-s.pdf Size:526K _upd

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2SJ479L

 2SJ474-01L,S FUJI POWER MOSFET Characteristics 2 2SJ474-01L,S FUJI POWER MOSFET 3 2SJ474-01L,S FUJI POWER MOSFET 4

5.7. 2sj471.pdf Size:48K _hitachi

2SJ479L
2SJ479L

2SJ471 Silicon P Channel DVL MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features Low on-resistance RDS(on) = 25 m? typ. 4V gate drive devices. High speed switching Outline TO220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGS

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