2SJ549L Todos los transistores

 

2SJ549L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ549L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: LDPAK
     - Selección de transistores por parámetros

 

2SJ549L Datasheet (PDF)

 0.1. Size:110K  renesas
rej03g0896 2sj549lsds.pdf pdf_icon

2SJ549L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:97K  renesas
2sj549.pdf pdf_icon

2SJ549L

2SJ549(L), 2SJ549(S) Silicon P Channel MOS FET REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Package

 9.1. Size:90K  renesas
2sj545.pdf pdf_icon

2SJ549L

2SJ545 Silicon P Channel MOS FET REJ03G0892-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. GateG2. Drain3. Source123SRev.4.0

 9.2. Size:90K  renesas
2sj540.pdf pdf_icon

2SJ549L

2SJ540 Silicon P Channel MOS FET REJ03G0887-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Flange)3. Source123SRe

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AFC1539 | IXTQ130N20T | CEDM8004 | SFP133N150AC2 | FDFMA2P029Z | 2N6904 | TSM4936DCS

 

 
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