2SJ551L Todos los transistores

 0.1. Size:108K  renesas
 rej03g0898 2sj551lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:95K  renesas
 2sj551.pdf

2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET REJ03G0898-0400 (Previous ADE-208-647B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack

 9.1. Size:90K  renesas
 2sj555.pdf

2SJ555 Silicon P Channel MOS FET REJ03G0902-0300 (Previous ADE-208-634A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange

 9.2. Size:95K  renesas
 2sj550.pdf

2SJ550(L), 2SJ550(S) Silicon P Channel MOS FET REJ03G0897-0300 (Previous ADE-208-633A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack

 9.3. Size:103K  renesas
 rej03g0902 2sj555ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:103K  renesas
 rej03g0901 2sj554ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. Size:90K  renesas
 2sj554.pdf

2SJ554 Silicon P Channel MOS FET REJ03G0901-0400 (Previous ADE-208-628B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange

 9.6. Size:109K  renesas
 rej03g0897 2sj550lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:109K  renesas
 rej03g0899 2sj552lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:96K  renesas
 2sj553.pdf

2SJ553(L), 2SJ553(S) Silicon P Channel MOS FET REJ03G0900-0400 (Previous ADE-208-650B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack

 9.9. Size:109K  renesas
 rej03g0900 2sj553lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:96K  renesas
 2sj552.pdf

2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET REJ03G0899-0400 (Previous ADE-208-651B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Pack

 9.11. Size:276K  renesas
 2sj557a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.12. Size:50K  nec
 2sj559.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ559 is a switching device which can be driven directly 0.3 0.05 0.1+0.1 0.05 by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital

 9.13. Size:60K  nec
 2sj557.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SJ557 is a switching device which can be driven directly +0.1 0.4 0.05 by a 4 V power source. 0.16+0.1 0.06 The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such