2SK1151L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1151L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 20 W
   Voltaje máximo drenador - fuente |Vds|: 450 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 1.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 45 pF
   Resistencia entre drenaje y fuente RDS(on): 5.5 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET 2SK1151L

2SK1151L Datasheet (PDF)

..1. Size:273K inchange semiconductor
2sk1151l.pdf

isc N-Channel MOSFET Transistor 2SK1151LFEATURESDrain Current I = 1.5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

7.1. Size:90K renesas
2sk1151.pdf

2SK1151(L), 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous: ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code:

7.2. Size:119K renesas
r07ds0397ej 2sk115152.pdf

Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ03002SK1152(L), 2SK1152(S) (Previous: REJ03G0907-0200)Rev.3.00Silicon N Channel MOS FET May 16, 2011Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outlin

7.3. Size:265K inchange semiconductor
2sk1151s.pdf

isc N-Channel MOSFET Transistor 2SK1151SFEATURESDrain Current I = 1.5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: