2SK1151L MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK1151L datasheet

..1. Size:273K inchange semiconductor
2sk1151l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1151L FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 5.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

7.1. Size:90K renesas
2sk1151.pdf pdf_icon

2SK1151(L), 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code

7.2. Size:119K renesas
r07ds0397ej 2sk115152.pdf pdf_icon

Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ0300 2SK1152(L), 2SK1152(S) (Previous REJ03G0907-0200) Rev.3.00 Silicon N Channel MOS FET May 16, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outlin

7.3. Size:265K inchange semiconductor
2sk1151s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1151S FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 5.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Otros transistores... 2SJ550L , 2SJ550S , 2SJ551L , 2SJ551S , 2SJ552L , 2SJ552S , 2SJ553L , 2SJ553S , AON7506 , 2SK1151S , 2SK1152L , 2SK1152S , 2SK1155 , 2SK1156 , 2SK1158 , 2SK1160 , 2SK1162 .