2SK1152S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1152S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 20 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de 2SK1152S MOSFET
- Selecciónⓘ de transistores por parámetros
2SK1152S datasheet
..1. Size:265K inchange semiconductor
2sk1152s.pdf 
isc N-Channel MOSFET Transistor 2SK1152S FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
7.1. Size:273K inchange semiconductor
2sk1152l.pdf
isc N-Channel MOSFET Transistor 2SK1152L FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
8.1. Size:49K 1
2sk1159 2sk1160.pdf
2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25
8.2. Size:96K renesas
rej03g0910 2sk1157ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:83K renesas
2sk1153.pdf
2SK1153, 2SK1154 Silicon N Channel MOS FET REJ03G0908-0200 (Previous ADE-208-1246) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name T
8.4. Size:83K renesas
2sk1155.pdf
2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous ADE-208-1247) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name T
8.5. Size:196K renesas
rej03g0911 2sk1159ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:90K renesas
2sk1151.pdf
2SK1151(L), 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code
8.7. Size:99K renesas
2sk1159 2sk1160.pdf
2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code PRSS0004AC-A
8.8. Size:83K renesas
2sk1157.pdf
2SK1157, 2SK1158 Silicon N Channel MOS FET REJ03G0910-0200 (Previous ADE-208-1248) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code PRSS0004AC-A (P
8.9. Size:96K renesas
rej03g0909 2sk1155ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.10. Size:119K renesas
r07ds0397ej 2sk115152.pdf
Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ0300 2SK1152(L), 2SK1152(S) (Previous REJ03G0907-0200) Rev.3.00 Silicon N Channel MOS FET May 16, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outlin
8.11. Size:262K inchange semiconductor
2sk1158.pdf
isc N-Channel MOSFET Transistor 2SK1158 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.12. Size:273K inchange semiconductor
2sk1151l.pdf
isc N-Channel MOSFET Transistor 2SK1151L FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 5.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
8.13. Size:261K inchange semiconductor
2sk1153.pdf
isc N-Channel MOSFET Transistor 2SK1153 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 2.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.14. Size:261K inchange semiconductor
2sk1155.pdf
isc N-Channel MOSFET Transistor 2SK1155 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.15. Size:261K inchange semiconductor
2sk1154.pdf
isc N-Channel MOSFET Transistor 2SK1154 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.16. Size:265K inchange semiconductor
2sk1151s.pdf
isc N-Channel MOSFET Transistor 2SK1151S FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 5.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
8.17. Size:261K inchange semiconductor
2sk1156.pdf
isc N-Channel MOSFET Transistor 2SK1156 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.18. Size:261K inchange semiconductor
2sk1157.pdf
isc N-Channel MOSFET Transistor 2SK1157 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.19. Size:261K inchange semiconductor
2sk1159.pdf
isc N-Channel MOSFET Transistor 2SK1159 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
Otros transistores... 2SJ551S
, 2SJ552L
, 2SJ552S
, 2SJ553L
, 2SJ553S
, 2SK1151L
, 2SK1151S
, 2SK1152L
, TK10A60D
, 2SK1155
, 2SK1156
, 2SK1158
, 2SK1160
, 2SK1162
, 2SK1167
, 2SK1168
, 2SK1170
.
History: AOU2N60A
| 4N60L-TF1-T
| IPP60R099P7
