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2SK1170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1170

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 500 V

Corriente continua de drenaje (Id): 20 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.22 Ohm

Empaquetado / Estuche: TO3P

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2SK1170 Datasheet (PDF)

1.1. 2sk1169 2sk1170.pdf Size:44K _update

2SK1170
2SK1170

2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

1.2. 2sk1169 2sk1170.pdf Size:49K _hitachi

2SK1170
2SK1170

2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

 4.1. 2sk1172.pdf Size:60K _update

2SK1170

查询2SK1172供应商

4.2. 2sk1171-01 2sk1172-01.pdf Size:139K _update

2SK1170



 4.3. 2sk1171.pdf Size:62K _update

2SK1170
2SK1170

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1171 DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage

4.4. 2sk117.pdf Size:299K _toshiba

2SK1170
2SK1170

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Y | = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS • High breakdown voltage: V = -50 V GDS • Low noise: NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k?) DS D G • High input impedance: I = -1 nA (max) (V = -30 V) GSS

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