2SK1299S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK1299S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3. Source 4. D

isc N-Channel MOSFET Transistor 2SK1299L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1297 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1297 Absolute Max

2SK1298 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3PFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1298 Absolute Maximum Rat

2SK1296 Silicon N-Channel MOS FET Application TO 220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum

isc N-Channel MOSFET Transistor 2SK1297 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive ABS

isc N-Channel MOSFET Transistor 2SK1298 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

isc N-Channel MOSFET Transistor 2SK1296 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose