2SK1306 Todos los transistores

 ..1. Size:83K  renesas
 2sk1306.pdf

2SK1306 Silicon N Channel MOS FET REJ03G0925-0200 (Previous ADE-208-1264) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 ..2. Size:252K  inchange semiconductor
 2sk1306.pdf

isc N-Channel MOSFET Transistor 2SK1306 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 0.1. Size:96K  renesas
 rej03g0925 2sk1306ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:96K  renesas
 rej03g0920 2sk1301ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:96K  renesas
 rej03g0919 2sk1300ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:82K  renesas
 2sk1300.pdf

2SK1300 Silicon N Channel MOS FET REJ03G0919-0200 (Previous ADE-208-1258) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 8.4. Size:82K  renesas
 2sk1302.pdf

2SK1302 Silicon N Channel MOS FET REJ03G0921-0200 (Previous ADE-208-1260) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code PRSS00

 8.5. Size:96K  renesas
 rej03g0926 2sk1307ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:95K  renesas
 rej03g0921 2sk1302ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:97K  renesas
 rej03g0922 2sk1303ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:83K  renesas
 2sk1307.pdf

2SK1307 Silicon N Channel MOS FET REJ03G0926-0200 (Previous ADE-208-1265) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code PRSS00

 8.9. Size:82K  renesas
 2sk1305.pdf

2SK1305 Silicon N Channel MOS FET REJ03G0924-0200 (Previous ADE-208-1263) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 8.10. Size:84K  renesas
 2sk1304.pdf

2SK1304 Silicon N Channel MOS FET REJ03G0923-0200 (Previous ADE-208-1262) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 8.11. Size:97K  renesas
 rej03g0923 2sk1304ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.12. Size:96K  renesas
 rej03g0924 2sk1305ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.13. Size:84K  renesas
 2sk1303.pdf

2SK1303 Silicon N Channel MOS FET REJ03G0922-0200 (Previous ADE-208-1261) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 8.14. Size:82K  renesas
 2sk1301.pdf

2SK1301 Silicon N Channel MOS FET REJ03G0920-0200 (Previous ADE-208-1259) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 8.15. Size:261K  inchange semiconductor
 2sk1300.pdf

isc N-Channel MOSFET Transistor 2SK1300 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 8.16. Size:261K  inchange semiconductor
 2sk1302.pdf

isc N-Channel MOSFET Transistor 2SK1302 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

 8.17. Size:252K  inchange semiconductor
 2sk1307.pdf

isc N-Channel MOSFET Transistor 2SK1307 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

 8.18. Size:252K  inchange semiconductor
 2sk1305.pdf

isc N-Channel MOSFET Transistor 2SK1305 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 8.19. Size:259K  inchange semiconductor
 2sk1304.pdf

isc N-Channel MOSFET Transistor 2SK1304 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

 8.20. Size:259K  inchange semiconductor
 2sk1303.pdf

isc N-Channel MOSFET Transistor 2SK1303 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

 8.21. Size:261K  inchange semiconductor
 2sk1301.pdf

isc N-Channel MOSFET Transistor 2SK1301 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.