BUK9628-55 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK9628-55 datasheet

..1. Size:55K philips
buk9628-55 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9628-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 40 A the device fea

0.1. Size:317K philips
buk9528-55a buk9528-55a buk9628-55a.pdf pdf_icon

BUK9528-55A; BUK9628-55A TrenchMOS logic level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9528-55A in SOT78 (TO-220AB) BUK9628-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS techno

0.2. Size:770K nxp
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BUK9628-55A N-channel TrenchMOS logic level FET Rev. 02 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feat

6.1. Size:77K philips
buk9528 buk9628-100a.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 49 A trench techn