BUK9628-55 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9628-55
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: SOT404

Búsqueda de reemplazo de MOSFET BUK9628-55

BUK9628-55 Datasheet (PDF)

..1. Size:55K philips
buk9628-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9628-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 40 Athe device fea

0.1. Size:317K philips
buk9528-55a buk9528-55a buk9628-55a.pdf

BUK9528-55A; BUK9628-55ATrenchMOS logic level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9528-55A in SOT78 (TO-220AB)BUK9628-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

0.2. Size:770K nxp
buk9628-55a.pdf

BUK9628-55AN-channel TrenchMOS logic level FETRev. 02 17 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feat

6.1. Size:77K philips
buk9528 buk9628-100a.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 49 Atrench techn

6.2. Size:1288K nxp
buk9628-100a.pdf

BUK9628-100AN-channel TrenchMOS logic level FETRev. 02 26 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featur

Otros transistores... BUK9608-55 , BUK9610-30 , BUK9614-30 , BUK9614-55 , BUK9618-30 , BUK9618-55 , BUK9620-55 , BUK9624-55 , AO4468 , BUK9635-55 , BUK9675-55 , BUK9775-55 , BUK98150-55 , BUK9830-30 , BUK9840-55 , BUK9880-55 , BUP60 .

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