BUK9635-55 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK9635-55
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Paquete / Cubierta: SOT404

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BUK9635-55 Datasheet (PDF)

..1. Size:56K philips
buk9635-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9635-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 34 Athe device fea

0.1. Size:71K philips
buk9535-55a buk9635-55a.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo

0.2. Size:834K nxp
buk9635-55a.pdf

BUK9635-55AN-channel TrenchMOS logic level FETRev. 2 21 April 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

0.3. Size:1185K cn vbsemi
buk9635-55a.pdf

BUK9635-55Awww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.023 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS

Otros transistores... BUK9610-30 , BUK9614-30 , BUK9614-55 , BUK9618-30 , BUK9618-55 , BUK9620-55 , BUK9624-55 , BUK9628-55 , EMB04N03H , BUK9675-55 , BUK9775-55 , BUK98150-55 , BUK9830-30 , BUK9840-55 , BUK9880-55 , BUP60 , BUP61 .

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