2SK1338 Todos los transistores

 ..1. Size:81K  renesas
 2sk1338.pdf

2SK1338 Silicon N Channel MOS FET REJ03G0935-0200 (Previous ADE-208-1275) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB)

 ..2. Size:200K  inchange semiconductor
 2sk1338.pdf

isc N-Channel MOSFET Transistor 2SK1338 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela

 0.1. Size:95K  renesas
 rej03g0935 2sk1338ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:102K  sanyo
 2sk1332.pdf

Ordering number EN3137 N-Channel Junction Silicon FET 2SK1332 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Ideal for use in variable resistors, analog switches, unit mm low-frequency amplifiers, and constant-current 2058 circuits. [2SK1332] 0.3 Features 0.15 3 Ultrasmall-sized package permitting 2SK1332- 0 to 0.1 applied sets to

 8.2. Size:96K  renesas
 rej03g0936 2sk1339ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:82K  renesas
 2sk1339.pdf

2SK1339 Silicon N Channel MOS FET REJ03G0936-0200 (Previous ADE-208-1276) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D

 8.4. Size:74K  renesas
 2sk1337.pdf

2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 (Previous ADE-208-1274) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 8.5. Size:77K  renesas
 2sk1334.pdf

2SK1334 Silicon N Channel MOS FET REJ03G0932-0200 (Previous ADE-208-1271) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PLZZ0004CA-A (Package name UPAK R )

 8.6. Size:74K  renesas
 2sk1336.pdf

2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 (Previous ADE-208-1273) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

 8.7. Size:90K  renesas
 rej03g0932 2sk1334ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:137K  panasonic
 2sk1331.pdf

 8.9. Size:189K  hitachi
 2sk133 2sk134 2sk135.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.10. Size:591K  hitachi
 2sk1335l-s.pdf

 8.11. Size:132K  no
 2sk1333.pdf

 8.12. Size:58K  inchange semiconductor
 2sk1330a.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330A DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=900V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 900 V DSS VGS Gate-Source Voltag

 8.13. Size:194K  inchange semiconductor
 2sk1331.pdf

isc N-Channel MOSFET Transistor 2SK1331 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT Drain-Source Voltage (V =0) 50

 8.14. Size:58K  inchange semiconductor
 2sk1330.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 800 V DSS VGS Gate-Source Voltage

 8.15. Size:203K  inchange semiconductor
 2sk1339.pdf

isc N-Channel MOSFET Transistor 2SK1339 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra

 8.16. Size:256K  inchange semiconductor
 2sk1333.pdf

isc N-Channel MOSFET Transistor 2SK1333 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.