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2SK1515 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1515

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 450 V

Corriente continua de drenaje (Id): 10 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO3P

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2SK1515 Datasheet (PDF)

1.1. 2sk1515.pdf Size:84K _renesas

2SK1515
2SK1515

2SK1515, 2SK1516 Silicon N Channel MOS FET REJ03G0946-0200 (Previous: ADE-208-1286) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE

1.2. rej03g0946 2sk1515ds.pdf Size:97K _renesas

2SK1515
2SK1515

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 1.3. 2sk1515.pdf Size:202K _inchange_semiconductor

2SK1515
2SK1515

isc N-Channel MOSFET Transistor 2SK1515 ESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V =450 (Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

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