2SK1623L Todos los transistores

 ..1. Size:218K  inchange semiconductor
 2sk1623l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1623L FEATURES With TO-262 packaging High speed switching Low driving power Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.1. Size:102K  renesas
 rej03g0958 2sk1623lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:89K  renesas
 2sk1623.pdf

2SK1623(L), 2SK1623(S) Silicon N Channel MOS FET REJ03G0958-0300 (Previous ADE-208-1299) Rev.3.00 Jan 10, 2006 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa

 7.2. Size:1581K  cn vbsemi
 2sk1623.pdf

2SK1623 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless