2SK1647L Todos los transistores

 

2SK1647L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1647L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm

Encapsulados: LDPAK

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2SK1647L datasheet

 0.1. Size:107K  renesas
 rej03g0963 2sk1647lsds.pdf pdf_icon

2SK1647L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:55K  renesas
 2sk1647.pdf pdf_icon

2SK1647L

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.1. Size:670K  toshiba
 2sk1643.pdf pdf_icon

2SK1647L

 8.2. Size:73K  toshiba
 2sk1641.pdf pdf_icon

2SK1647L

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MOSTRAR MÁS

Otros transistores... 2SK1522 , 2SK1527 , 2SK1528L , 2SK1528S , 2SK1573 , 2SK1623L , 2SK1623S , 2SK1629 , IRF640 , 2SK1647S , 2SK1671 , 2SK1697 , 2SK1761 , 2SK1762 , 2SK1764 , 2SK1775 , 2SK1807 .

History: 10N60F | IRFS3004-7P | 10N65AF | 7N60F | IRLU3802 | IRL1404 | IRL7833L

 

 

 

 

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