2SK1647S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1647S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 175 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
Paquete / Cubierta: LDPAK
- Selección de transistores por parámetros
2SK1647S Datasheet (PDF)
2sk1647.pdf

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
rej03g0963 2sk1647lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1641.pdf

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Otros transistores... 2SK1527 , 2SK1528L , 2SK1528S , 2SK1573 , 2SK1623L , 2SK1623S , 2SK1629 , 2SK1647L , IRF1404 , 2SK1671 , 2SK1697 , 2SK1761 , 2SK1762 , 2SK1764 , 2SK1775 , 2SK1807 , 2SK1808 .
History: IPI100N08N3G | SVF7N60CF | IRF7309IPBF | SVF2N60CD | WFY3N02 | APT904R2AN | WMS032N04LG2
History: IPI100N08N3G | SVF7N60CF | IRF7309IPBF | SVF2N60CD | WFY3N02 | APT904R2AN | WMS032N04LG2



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