2SK1697 Todos los transistores

 

2SK1697 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1697
   Código: EY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 17 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: UPAK

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2SK1697 Datasheet (PDF)

 ..1. Size:29K  hitachi
2sk1697.pdf

2SK1697
2SK1697

2SK1697Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1697Absolut

 0.1. Size:97K  renesas
rej03g1373 2sk1697ds.pdf

2SK1697
2SK1697

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:113K  sanyo
2sk1691.pdf

2SK1697
2SK1697

Ordering number:EN4224N-Channel Silicon MOSFET2SK1691Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A[2SK1691]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2090A[2SK1691]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : G

 8.2. Size:113K  sanyo
2sk1690.pdf

2SK1697
2SK1697

Ordering number:EN4223N-Channel Silicon MOSFET2SK1690Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A[2SK1690]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2090A[2SK1690]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : G

 8.3. Size:29K  hitachi
2sk1698.pdf

2SK1697
2SK1697

2SK1698Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1698Absolut

 8.4. Size:155K  no
2sk1693.pdf

2SK1697
2SK1697

 8.5. Size:67K  no
2sk1692.pdf

2SK1697
2SK1697

 8.6. Size:46K  shindengen
2sk1695 f10w50c.pdf

2SK1697

 8.7. Size:48K  shindengen
2sk1696 fp10w50c.pdf

2SK1697

 8.8. Size:48K  shindengen
2sk1694 fp8v50.pdf

2SK1697

 8.9. Size:213K  inchange semiconductor
2sk1693.pdf

2SK1697
2SK1697

isc N-Channel MOSFET Transistor 2SK1693DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switchingSuitable for switching regulator, DCDC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM

 8.10. Size:218K  inchange semiconductor
2sk1692.pdf

2SK1697
2SK1697

isc N-Channel MOSFET Transistor 2SK1692DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =900 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed. high current switching applications.DC-DC converter and motor driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL AR

 8.11. Size:212K  inchange semiconductor
2sk1699.pdf

2SK1697
2SK1697

isc N-Channel MOSFET Transistor 2SK1699DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh Voltagehigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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