2SK2796L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK2796LFEATURESDrain Current I = 16.9A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDC/DC ConvertersDC/AC InvertersMotor DrivesABSOLUTE MA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2799Case : FTO-220(Unit : mm)(F10F35VX2)350V 10AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh voltage power supplyInverter

Ordering number:ENN6437N-Channel Silicon MOSFET2SK2791Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SK2791]6.52.35.00.540.850.71.20.60.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TP2092B[2SK2791]6.5 2.35.0 0.540.50.85

TransistorsSwitching (500V, 5A)2SK2793FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications16

TransistorsSwitching (600V, 4A)2SK2792FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications15

Power F-MOS FETs 2SK7582SK2790(Tentative)Silicon N-Channel Power F-MOSUnit : mm Features Low ON-resistance RDS(on) 8.5 0.23.4 0.36.0 0.5 1.0 0.1 High-speed switching No secondary breakdown Applications1.5max. 1.1max. High-speed switching Motor drive0.8 0.1 0.5max.2.54 0.35.08 0.51 2 3 Absolute Maximum Ratings (Tc = 25C)1 : GateParameter Sy

Power F-MOS FETs 2SK27972SK2797(Tentative)Silicon N-Channel MOSUnit : mmFor high-speed switching6.5 0.1For high-frequency power amplification5.3 0.14.35 0.13.0 0.1 Features Avalanche energy capability guaranteed : EAS > 10mJ High-speed switching : tf=15ns No secondary breakdown1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maxim

2SK2795Silicon N Channel MOS FETUHF Power AmplifierADE-208-466 A (Z)2nd. EditionNovember. 1996Features High power output, High gain, High effeciencyPG = 11dB, Pout = 24dBm, D = 40 %min. (f = 836.5MHz) Compact package capable of surface mountingOutlineUPAK12341. Gate2. Source3. Drain4. SourceThis Device is sensitive to Electro Static Discharge.

isc N-Channel MOSFET Transistor 2SK2799FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS